Electron beam lithography is typically limited to scientific investigation or small volume production since it is so much slower than optical lithography. However, using a high density of electron emitting sources the speed of e-beam lithography can be scaled up which is the approach taken by companies such as Multibeam Systems and Mapper Lithography.
I have had a few of my patents issue recently teaching nanostructured electron emission tips formed on the surface of a stamp structure to perform a form of parallel electron beam lithography.
US Patent 7,425,715 - Digital parallel electron beam lithography stamp
This patent teaches an addressing system for a high density array of carbon nanotube electron emitters controlled to generate a digital mask for patterning a substrate.
US Patent 7,550,747 - Parallel electron beam lithography stamp
This patent teaches a patterned array of carbon nanotube electron emitters which replicate a mask pattern and a second array of carbon nanotubes forming an alignment reference with a target substrate.
Thursday, July 2, 2009
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